GSMBT4401 datasheet(1/2 Pages) GTM

部件名	GSMBT4401

功能描述	NPN EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

标志

1 / 2 page

CORPORATION

1/2

ISSUED DATE :2004/12/20

REVISED DATE :

GSM BT4401

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBT4401 is designed for general purpose switching and amplifier applications.

Features

&Complementary to GSMBT4403

&High DC Current Gain: 100-300 at 150mA

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage at Ta=25 :

VCBO

60

V

Collector to Emitter Voltage at Ta=25 :

VCEO

40

V

Emitter to Base Voltage at Ta=25 :

VEBO

6

V

Collector Current at Ta=25 :

IC

600

mA

Total Power Dissipation at Ta=25 :

PD

250

mW

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

V

IC=100uA

BVCEO

40

-

V

IC=1mA

BVEBO

6

-

V

IE=10uA

ICEX

-

100

nA

VCE=35V, VBE= 0.4V

*VCE(sat)1

-

400

mV

IC=150mA, IB=15mA

*VCE(sat)2

-

750

mV

IC=500mA, IB=50mA

*VBE(sat)1

-

950

mV

IC=150mA, IB=15mA

*VBE(sat)2

-

1.2

V

IC=500mA, IB=50mA

*hFE1

20

-

VCE=1V, IC=0.1mA

*hFE2

40

-

VCE=1V, IC=1mA

*hFE3

80

-

VCE=1V, IC=10mA

*hFE4

100

-

300

VCE=1V, IC=150mA

*hFE5

40

-

VCE=2V, IC=500mA

fT

250

-

MHz

VCE=10V, IC=20mA, f=100MHz

Cob

-

6.5

pF

VCB=5V, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

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