Data Sheet

ADA4898-1/ADA4898-2

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

Rating

Supply Voltage

36 V

Power Dissipation

See Figure 4

Differential Mode Input Voltage

±1.5 V

Common-Mode Input Voltage

±11.4 V

Storage Temperature Range

−65°C to +150°C

Operating Temperature Range

−40°C to +105°C

Lead Temperature (Soldering, 10 sec)

300°C

Junction Temperature

150°C

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions; that is, θJA is

specified for a device soldered in the circuit board with its

exposed paddle soldered to a pad on the PCB surface that is

thermally connected to a copper plane, with zero airflow.

Table 4.

Package Type

θJA

θJC

Unit

Single 8-Lead SOIC_N_EP on a 4-Layer Board

47

29

°C/W

Dual 8-Lead SOIC_N_EP on a 4-Layer Board

42

29

°C/W

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation in the ADA4898-1/

ADA4898-2 package is limited by the associated rise in junction

temperature (TJ) on the die. At approximately 150°C, which is

the glass transition temperature, the plastic changes its properties.

Even temporarily exceeding this temperature limit can change

the stresses that the package exerts on the die, permanently

shifting the parametric performance of the ADA4898-1/

ADA4898-2. Exceeding a junction temperature of 150°C for an

extended period can result in changes in the silicon devices,

potentially causing failure.

The power dissipated in the package (PD) is the sum of the

quiescent power dissipation and the power dissipated in the

package due to the output load drive. The quiescent power is

the voltage between the supply pins (VS) times the quiescent

current (IS). The power dissipated due to the load drive depends

upon the particular application. For each output, the power due

to load drive is calculated by multiplying the load current by the

associated voltage drop across the device. RMS voltages and

currents must be used in these calculations.

Airflow increases heat dissipation, effectively reducing θJA. In

addition, more metal directly in contact with the package leads

from metal traces, through holes, ground, and power planes

reduces the θJA. The exposed paddle on the underside of the

package must be soldered to a pad on the PCB surface that is

thermally connected to a copper plane to achieve the specified θJA.

Figure 4 shows the maximum power dissipation vs. the ambient

temperature for the single and dual 8-lead SOIC_N_EP on a

JEDEC standard 4-layer board, with its underside paddle

soldered to a pad that is thermally connected to a PCB plane. θJA

values are approximations.

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

5.0

4.5

AMBIENT TEMPERATURE (°C)

0

20

40

60

80

100

10

30

50

70

90

–40

–20

–30

–10

ADA4898-2

ADA4898-1

Figure 4. Maximum Power Dissipation vs. Ambient Temperature

ESD CAUTION

Rev. E | Page 5 of 20