Data Sheet

ADA4075-2

Rev. C | Page 3 of 24

SPECIFICATIONS

VSY = ±15 V, VCM = 0 V, TA = 25°C, SOIC package, unless otherwise noted.

Table 2.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

0.2

1

mV

−40°C ≤ TA ≤ +125°C

1.2

mV

Input Bias Current

IB

30

100

nA

−40°C ≤ TA ≤ +125°C

150

nA

Input Offset Current

IOS

5

50

nA

−40°C ≤ TA ≤ +125°C

75

nA

Input Voltage Range

−40°C ≤ TA ≤ +125°C

−12.5

+12.5

V

Common-Mode Rejection Ratio

CMRR

VCM = −12.5 V to +12.5 V

110

118

dB

−40°C ≤ TA ≤ +125°C

106

dB

Large Signal Voltage Gain

AVO

RL = 2 kΩ, VO = −11 V to +11 V

114

117

dB

−40°C ≤ TA ≤ +125°C

108

dB

RL = 600 Ω, VO = −10 V to +10 V

112

117

dB

−40°C ≤ TA ≤ +125°C

106

dB

Offset Voltage Drift

∆VOS/∆T

−40°C ≤ TA ≤ +125°C

0.3

µV/°C

Input Resistance, Differential Mode

RINDM

1.5

MΩ

Input Resistance, Common Mode

RINCM

500

MΩ

Input Capacitance, Differential Mode

CINDM

2.4

pF

Input Capacitance, Common Mode

CINCM

2.1

pF

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

RL = 2 kΩ to GND

12.8

13

V

−40°C ≤ TA ≤ +125°C

12.5

V

RL = 600 Ω to GND

12.4

12.8

V

−40°C ≤ TA ≤ +125°C

12

V

VSY = ±18 V, RL = 600 Ω to GND

15

15.8

V

−40°C ≤ TA ≤ +125°C

14

V

Output Voltage Low

VOL

RL = 2 kΩ to GND

−14

−13.6

V

−40°C ≤ TA ≤ +125°C

−13

V

RL = 600 Ω to GND

−13.6

−13

V

−40°C ≤ TA ≤ +125°C

−12.5

V

VSY = ±18 V, RL = 600 Ω to GND

−16.6

−16

V

−40°C ≤ TA ≤ +125°C

−15

V

Short-Circuit Current

ISC

40

mA

Closed-Loop Output Impedance

ZOUT

f = 1 kHz, AV = 1

0.1

Ω

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VSY = ±4.5 V to ±18 V

106

110

dB

−40°C ≤ TA ≤ +125°C

100

dB

Supply Current per Amplifier

ISY

VSY = ±4.5 V to ±18 V, IO = 0 mA

1.8

2.25

mA

−40°C ≤ TA ≤ +125°C

3.35

mA

DYNAMIC PERFORMANCE

Slew Rate

SR

RL = 2 kΩ, AV = 1

12

V/µs

Settling Time

tS

To 0.01%, VIN = 10 V step, RL = 1 kΩ

3

µs

Gain Bandwidth Product

GBP

RL = 1 MΩ, CL = 35 pF, AV = 1

6.5

MHz

Phase Margin

ΦM

RL = 1 MΩ, CL = 35 pF, AV = 1

60

Degrees

THD + NOISE

Total Harmonic Distortion and Noise

THD + N

RL = 2 kΩ, AV = 1, VIN = 3 V rms, f = 1 kHz

0.0002

%

NOISE PERFORMANCE

Voltage Noise

en p-p

f = 0.1 Hz to 10 Hz

60

nV p-p

Voltage Noise Density

en

f = 1 kHz

2.8

nV/√Hz

Current Noise Density

in

f = 1 kHz

1.2

pA/√Hz