Data Sheet

ADHV4702-1

THEORY OF OPERATION

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Rev. D | 15 of 22

SR = VO × 2πfM

where VO is the peak output voltage.

When operating continuously at or near full power bandwidth, the

increased supply current may cause an increase in TJ beyond

the safe operating temperature, resulting in device damage. The

dynamic safe operating area (SOA) for the EVAL-ADHV4702-1CPZ

evaluation board is shown in Figure 61 in the Safe Operating

Area section. The dynamic SOA shows the connection between

the output swing and the maximum input/output frequency for

pulse response. To expand the SOA curve, use additional thermal

management or limit the differential voltage across the inputs to 2

VF with external diodes, which limits the current produced by the

slew boosting circuit and reduces the internal power dissipation.

Clamping the differential input voltage of the ADHV4702-1 in this

way protects the amplifier in dynamic operation but limits slew rate

and large signal bandwidth. Figure 46 shows a simplified schematic

with external input clamping diodes, and Figure 47 to Figure 50

show the large signal pulse response at various temperatures

and gains while the ADHV4702-1 inputs are clamped by two ON

Semiconductor SBAV199LT1G diode pairs at 2 VF.

Figure 46. External Input Clamping Diodes Schematic

Figure 47. Large Signal Pulse Response at Various TA with Two-Diode

Forward Voltages, Rising Edge, AV = 20, VS = ±110 V, VOUT = 200 V p-p, RF =

100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω

Figure 48. Large Signal Pulse Response at Various TA with Two-Diode

Forward Voltages, Falling Edge, AV = 20, VS = ±110 V, VOUT = 200 V p-p, RF =

100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω

Figure 49. Large Signal Pulse Response at Various TA with Two-Diode

Forward Voltages, Rising Edge, AV = 40, VS = ±110 V, VOUT = 200 V p-p, RF =

100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω

Figure 50. Large Signal Pulse Response at Various TA with Two-Diode

Forward Voltages, Falling Edge, AV = 40, VS = ±110 V, VOUT = 200 V p-p, RF =

100 kΩ, RLOAD = 10 kΩ, RADJ = 0 Ω