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TDF8541SD/N2 数据表(PDF) 2 Page - NXP Semiconductors |
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TDF8541SD/N2 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 54 page ![]() TDF8541 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 13 December 2011 2 of 54 NXP Semiconductors TDF8541 I2C-bus controlled 4 45 W power amplifier Temperature controlled gain reduction to prevent audio holes at high junction temperatures Programmable low battery voltage detection to enable 7.5 V or 6 V minimum battery voltage operation Overvoltage protection (load-dump safe up to VP = 50 V) with overvoltage pre-warning at 16 V Offset detection 3. Quick reference data 4. Ordering information Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VP(oper) operating supply voltage RL = 4 614.4 18 V Iq quiescent current no load - 260 350 mA no load; VP = 7 V - 190 - mA Po output power RL =4 ; VP = 14.4 V; THD = 0.5 % 18 20 - W RL =4 ; VP = 14.4 V; THD = 10 % 23 25 - W RL =2 ; VP = 14.4 V; THD = 10 % 40 44 - W Po(max) maximum output power RL =4 ; VP = 15.2 V; Vi = 2 V RMS square wave 41 45 - W RL =2 ; VP = 14.4 V; Vi = 2 V RMS square wave 58 64 - W THD total harmonic distortion Po =1Wto12W; fi = 1 kHz; RL =4 -0.01 0.1 % Vn(o) output noise voltage filter 20 Hz to 22 kHz (6th order); RS =50 amplifier mode - 40 60 V line driver mode - 25 33 V Table 2. Ordering information Type number Package Name Description Version TDF8541J/N2 DBS27P plastic DIL-bent-SIL (special bent) power package; 27 leads (lead length 6.8 mm) SOT827-1 TDF8541SD/N2 RDBS27P plastic rectangular-DIL-bent-SIL (reverse bent) power package; 27 leads (row spacing 2.54 mm) SOT878-1 TDF8541TH/N2 HSOP36 plastic, heatsink small outline package; 36 leads; low stand-off height SOT851-1 TDF8541JS/N2 DBSMS27P plastic dual bent surface mounted SIL power package; 27 leads SOT1154-1 |
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