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DSB-USS-R1 数据表(PDF) 4 Page - DOMINANT Semiconductors |
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DSB-USS-R1 数据表(HTML) 4 Page - DOMINANT Semiconductors |
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4 / 12 page ![]() 03/04/2006 V7.0 4 Typ. (V) Vf @ If = 20mA Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Electrical Characteristics at Ta=25˚C Max. (V) Vr @ Ir = 10uA Min. (V) Part Number DSB DST 3.2 3.4 3.8 4.0 5.0 5.0 Forward Voltage (V) Vf Binning (Optional) Vf Bin @ 20mA 0A 00 01 02 03 2.75 ... 3.05 3.05 ... 3.35 3.35 … 3.65 3.65 … 3.95 3.95 … 4.25 Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005) Reverse voltage ESD threshold (HBM) LED juction temperature Operating temperature Storage temperature Power dissipation (at room temperature) 20 200 5 2 125 -40 … +100 -40 … +100 80 mA mA V kV ˚C ˚C ˚C mW InGaN : DSx-xSx DOMINANT TM Semiconductors Innovating Illumination Please consult sales and marketing for special part number to incorporate Vf binning. Typ. (V) 2.9 2.9 |
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