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DDR-SJE-R2 数据表(PDF) 4 Page - DOMINANT Semiconductors |
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DDR-SJE-R2 数据表(HTML) 4 Page - DOMINANT Semiconductors |
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4 / 14 page ![]() Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005) Reverse voltage ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature Power dissipation (at room temperature) AlInGaP: 30; InGaN: 20 AlInGaP: 1000; InGaN: 200 5 2000 125 -40 … +100 -40 … +100 AlInGaP: 75; InGaN: 85 mA mA V V ˚C ˚C ˚C mW Colored Resin : DDx-xJE DOMINANT TM Semiconductors Innovating Illumination 23/04/2007 V5.0 4 |
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