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SWTS901 数据表(PDF) 4 Page - Seoul Semiconductor |
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SWTS901 数据表(HTML) 4 Page - Seoul Semiconductor |
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4 / 15 page ![]() Rev. 1.00 SWTS901 3. Absolute Maximum Ratings ( Ta = 25°C) Parameter Symbol Value Unit Power Dissipation Pd*1 120 mW Forward Current IF 30 mA Peak Forward Current IFM*2 100 mA Reverse Voltage VR 5 V Operating Temperature Topr -30 ~ +85 °C Storage Temperature Tstg -40 ~ +100 °C Junction Temperature Tj 125 °C *1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product. *2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10 4. Electro-Optical Characteristics ( Ta = 25°C) Item Symbol Condition Min Typ Max Unit Rank Y 2.7 - 3.0 Rank Z 3.0 - 3.3 Forward Voltage Rank A VF IF = 20 mA 3.3 - 3.7 V Reverse Current IR VR = 5 V - - 50 µA Rank I9 900 - 1000 Rank J0 1000 - 1100 Rank J1 1100 - 1200 Luminous Intensity*1 Rank J2 IV IF = 20 mA 1200 - 1300 mcd Viewing Angle*2 2 θ1/2 IF = 20 mA 120 ˚ x 0.264 - 0.296 Rank b y 0.248 - 0.295 x 0.287 - 0.311 Rank e y 0.276 - 0.315 x 0.307 - 0.330 Color Coordinates*3 Rank f y IF = 20 mA 0.294 - 0.339 - *1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. *3 Measurement Uncertainty of the Color Coordinates is ±0.01 * Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within the maximum ratings shown above. All measurements were made under the standardized environment of Seoul Semiconductor. SEOUL SEMICONDUCTOR CO., LTD. 3 SSC-QP-7-03-44(갑) |
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