OP184/OP284/OP484

Rev. J | Page 3 of 24

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage, OP184/OP284E Grade1

VOS

65

μV

−40°C ≤ TA ≤ +125°C

165

μV

Offset Voltage, OP184/OP284F Grade1

VOS

125

μV

−40°C ≤ TA ≤ +125°C

350

μV

Offset Voltage, OP484E Grade1

VOS

75

μV

–40°C ≤ TA ≤ +125°C

175

μV

Offset Voltage, OP484F Grade1

VOS

150

μV

–40°C ≤ TA ≤ +125°C

450

μV

Input Bias Current

IB

60

450

nA

–40°C ≤ TA ≤ +125°C

600

nA

Input Offset Current

IOS

2

50

nA

–40°C ≤ TA ≤ +125°C

50

nA

Input Voltage Range

0

5

V

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 5 V

60

dB

VCM = 1.0 V to 4.0 V, −40°C ≤ TA ≤ +125°C

86

dB

Large Signal Voltage Gain

AVO

RL = 2 kΩ, 1 V ≤ VO ≤ 4 V

50

240

V/mV

RL = 2 kΩ, −40°C ≤ TA ≤ +125°C

25

V/mV

Bias Current Drift

ΔIB/ΔT

150

pA/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 1.0 mA

4.80

V

Output Voltage Low

VOL

IL = 1.0 mA

125

mV

Output Current

IOUT

±6.5

mA

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 2.0 V to 10 V, −40°C ≤ TA ≤ +125°C

76

dB

Supply Current/Amplifier

ISY

VO = 2.5 V, −40°C ≤ TA ≤ +125°C

1.45

mA

Supply Voltage Range

VS

3

36

V

DYNAMIC PERFORMANCE

Slew Rate

SR

RL = 2 kΩ

1.65

2.4

V/µs

Settling Time

tS

To 0.01%, 1.0 V step

2.5

µs

Gain Bandwidth Product

GBP

3.25

MHz

Phase Margin

ΦM

45

Degrees

NOISE PERFORMANCE

Voltage Noise

en p-p

0.1 Hz to 10 Hz

0.3

μV p-p

Voltage Noise Density

en

f = 1 kHz

3.9

nV/√Hz

Current Noise Density

in

0.4

pA/√Hz

1

Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.