5.8 Typical Characteristics (continued)

for all voltage versions at TJ = 25°C, VIN = VOUT(nom) + 0.5V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF (unless otherwise

noted)

40

35

30

25

20

15

10

5

0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

V

V

-

(V)

IN

OUT

Frequency = 10 kHz

C

= 10

V

= 2.5 V

I

= 100 mA

mF

OUT

OUT

OUT

Legacy silicon

Figure 5-25. PSRR (Ripple Rejection) vs (VIN – VOUT)

New silicon, M3 suffix

Figure 5-26. PSRR (Ripple Rejection) vs (VIN – VOUT)

1

0.1

0.01

10

100

1k

10k

100k

Frequency (Hz)

COUT = 1mF

C

OUT = 0 mF

COUT = 10 mF

I

OUT = 150 mA

Legacy silicon

Figure 5-27. Noise Spectral Density CNR = 0µF

New silicon, M3 suffix

Figure 5-28. Noise Spectral Density CNR = 0µF

1

0.1

0.01

10

100

1k

10k

100k

Frequency (Hz)

I

OUT = 150 mA

COUT = 1mF

C

OUT = 0 mF

COUT = 10mF

Legacy silicon

Figure 5-29. Noise Spectral Density CNR = 0.01µF

New silicon, M3 suffix

Figure 5-30. Noise Spectral Density CNR = 0.01µF

www.ti.com

TPS732

SBVS037Q – AUGUST 2003 – REVISED SEPTEMBER 2024

Copyright © 2024 Texas Instruments Incorporated

Submit Document Feedback

11

Product Folder Links: TPS732