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OP1177ARMZ-R7 数据表(PDF) 20 Page - Analog Devices |
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OP1177ARMZ-R7 数据表(HTML) 20 Page - Analog Devices |
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20 / 24 page ![]() OP1177/OP2177/OP4177 Data Sheet Rev. I | Page 20 of 24 200Ω 500Ω 4.37kΩ 100Ω 100Ω 20Ω 4.12kΩ 4.12kΩ 5kΩ 49.9kΩ ADR421 +15V 0.1µF V+ 100Ω RTD 1/2 OP2177 7 6 5 1/2 OP2177 1 8 2 3 4 V– VOUT VOUT Figure 65. Low Power Linearized RTD Circuit SINGLE OPERATIONAL AMPLIFIER BRIDGE The low input offset voltage drift of the OP1177 makes it very effective for bridge amplifier circuits used in RTD signal condi- tioning. It is often more economical to use a single bridge operational amplifier as opposed to an instrumentation amplifier. In the circuit shown in Figure 66, the output voltage at the operational amplifier is 1 1 R2 R1 R R1 V R R2 V REF O where δ = ΔR/R is the fractional deviation of the RTD resistance with respect to the bridge resistance due to the change in temperature at the RTD. For δ << 1, the preceding expression becomes REF REF O V R2 R1 R2 R1 R R2 R2 R1 R R1 V R R2 V 1 1 With VREF constant, the output voltage is linearly proportional to δ with a gain factor of R2 R1 R2 R1 R R2 V REF 1 R R R R(1+δ) ADR421 15V 0.1µF OP1177 6 7 4 2 3 V+ V– RF RF VOUT Figure 66. Single Bridge Amplifier |
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