Data Sheet

ADRF5031

9 kHz to 20 GHz, Nonreflective, Silicon SPDT Switch

Rev. 0

DOCUMENT FEEDBACK

TECHNICAL SUPPORT

Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog

Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to

change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and

registered trademarks are the property of their respective owners.

FEATURES

►

Wideband frequency range, 9 kHz to 20 GHz

►

Nonreflective 50 Ω design

►

Low insertion loss

►

0.6 dB typical between 9 kHz to 6 GHz

►

0.8 dB typical between 6 GHz to 12 GHz

►

1.05 dB typical between 12 GHz to 20 GHz

►

High isolation

►

55 dB typical between 9 kHz to 6 GHz

►

50 dB typical between 6 GHz to 12 GHz

►

45 dB typical between 12 GHz to 20 GHz

►

High input linearity

►

P0.1dB: 35 dBm typical

►

IP3: 62 dBm typical

►

High RF power handling

►

Through path: 35 dBm peak and 33 dBm average

►

Terminated path: 32 dBm peak and 30 dBm average

►

Hot switching (RFC): 35 dBm peak and 33 dBm average

►

Hot switching (RFx): 32 dBm peak and 30 dBm average

►

CMOS/LVTTL compatible

►

No low-frequency spur; no negative voltage generator

►

RF on and off time: 5.0 µs

►

RF settling time (0.1 dB): 5.3 µs

►

Single-supply operation (VDD = 3.3 V, VSS = 0 V)

►

20-terminal, 3 mm × 3 mm, LGA package

►

Pin compatible with ADRF5023 and ADRF5027

APPLICATIONS

►

Test instrumentation

►

Military radios, radars, electronic counter measures (ECMs)

►

Microwave radios and very small aperture terminals (VSATs)

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5031 is a nonreflective, SPDT switch manufactured us-

ing the silicon on insulator (SOI) process. The ADRF5031 operates

from 9 kHz to 20 GHz with an insertion loss of lower than 1.05 dB

and isolation of higher than 45 dB. The device has an RF input

power handling capability of 33 dBm average and 35 dBm peak for

forward and reverse through paths, hot switching through the RFC

port, and 30 dBm average and 32 dBm peak for terminated paths

and hot switching through RFx ports. The ADRF5031 operates

with dual-supply voltages of ±3.3 V. The ADRF5031 employs com-

plementary metal-oxide semiconductor (CMOS) and low-voltage

transistor to transistor logic (LVTTL)-compatible control.

The ADRF5031 can also operate with a single positive supply volt-

age (VDD) applied while the negative supply voltage (VSS) is tied to

ground. In this operating condition, the small signal performance is

maintained while the switching characteristics, linearity, and power

handling performance are derated. See Table 2 for more details.

The ADRF5031 is pin compatible with the ADRF5023 and

ADRF5027 and also pin compatible with ADRF5030, a fast switch-

ing version, which operates between 100 MHz to 20 GHz.

The ADRF5031 is packaged in a 20-terminal, 3 mm × 3 mm,

RoHS-compliant, land grid array (LGA) and operates from −40°C to

+105°C.