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UBA2000T 数据表(PDF) 9 Page - NXP Semiconductors |
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UBA2000T 数据表(HTML) 9 Page - NXP Semiconductors |
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9 / 16 page ![]() 1996 Jan 03 9 Philips Semiconductors Product specification Electronic TL-lamp starter UBA2000T Output stage Isource peak source current (pulse shape Fig.6) Vout < 2 V; striking switching device 1.5 − 10 mA Isink output sink current Vout = 0.8 V 50 −− mA tW pulse width VCC =30V 5 −−µs Qp pulse charge VCC = 30 V; note 3 21 −− nC Vout output voltage Isink = 0.5 mA; driving gate device in preheat mode − 6.8 − V Timing tprf preheat time (first) N = 1; note 4 − 1.52 − s tprn preheat time (next) 2 ≤ N ≤ 7; note 5 − 0.64 − s tini initial time − 125 − ms Current protection Iprot(m) current protection level (peak value) 2.2 3.4 − A td delay time before current protection is enabled note 6 − 70 − ms Sense resistor Rsense internal sense resistor note 7 − 26 − m Ω Preheat current Ipr(rms) preheat current (RMS value) note 8 0.33 − 1.4 A Switching off current Iso preheat current level at the moment it is switched off note 9 285 380 475 mA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Notes 1. When the switching device is triggered, ICC =Isource. 2. This is the active current when the lamp is lit. The given value is valid for Vlamp = 115 V. The total current at Vin equals: Iin =ICC +Ic (leakage currents are neglected). 3. Qp =Isource × tp. 4. Time is derived from the mains frequency; division factor equals 76. 5. Time is derived from the mains frequency; division factor equals 32. 6. The delay time is set by a clock signal, which is derived from the current through the sense resistor. Due to inrush transients of the preheat current, variation of td is possible. 7. This is the resistance of the internal sense circuit (excluding the bonding wires). 8. To guarantee good functioning, a crest factor of at least 1.5 is needed at low currents. 9. When the holding current of TH1 is lower than Iso, TH1 is switched off at the holding current (in case of a trigger device). Fig.6 Pulse shape (typical value). handbook, halfpage MGE008 Isource (mA) 3 tw = 7 µs |
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