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UMA1021 数据表(PDF) 8 Page - NXP Semiconductors |
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UMA1021 数据表(HTML) 8 Page - NXP Semiconductors |
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8 / 16 page ![]() 1998 Nov 19 8 Philips Semiconductors Product specification Low-voltage frequency synthesizer for radio telephones UMA1021AM Charge pump output; pin 2 Vo(compl) compliance output voltage Rset = 5.6 kΩ 0.4 − VCC − 0.4 V Io(err) output current error Rset = 5.6 kΩ−25 − +25 % Io(match) sink-to-source current matching Rset = 5.6 kΩ− ±5 − % IL leakage current Rset = 5.6 kΩ; charge pump off; Vo(compl) = 1⁄2VCC −5 ±1+5 nA Phase noise N900 RF synthesizer’s contribution to close-in phase noise of 900 MHz VCO signal inside the closed loop bandwidth fxtal = 13 MHz; Vxtal = 0 dBm; fph(comp) = 200 kHz −−88 − dBc/Hz N1800 RF synthesizer’s contribution to close-in phase noise of 1.8 GHz VCO signal inside the closed loop bandwidth fxtal = 13 MHz; Vxtal = 0 dBm; fph(comp) = 200 kHz −−82 − dBc/Hz Interface logic inputs; pins 7, 9, 10 and 11 VIH HIGH-level input voltage 0.7VDD − VDD + 0.3 V VIL LOW-level input voltage −0.3 − 0.3VDD V Ii(bias) input bias current logic 1 or logic 0 −5 − +5 µA Ci input capacitance − 2 − pF Out-of-lock detector output; pin 1 VOL LOW-level output voltage open-drain output −− 0.3VDD V Eϕ(th) threshold phase error open-drain output − 25 − ns SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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