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2SC6096 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC6096 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() NPN Bipolar Transistor 2SC6096 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA, IE= 0A 120 -- -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA, RBE=∞ 100 -- -- V V(BR)EBO Emitter-Base Breakdown Voltage IE=10μA, IC=0A 6.5 -- -- V ICBO Collector Cutoff Current VCB= 80V; IE= 0A -- -- 1.0 μ A IEBO Emitter Cutoff Current VEB= 4V; IC= 0A -- -- 1.0 μ A hFE DC Current Gain IC= 100mA ; VCE= 5V 300 -- 600 VCE(sat) Collector-Emitter Saturation Voltage IC=1A, IB=100mA -- -- 0.15 V VBE(sat) Base-Emitter Saturation Voltage IC=1A, IB=100mA -- -- 1.2 V PACKAGE OUTLINE(UNIT:mm) |
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