Data Sheet

ADL8107

GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz

Rev. B

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FEATURES

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Single positive supply (self biased)

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Gain: 24 dB typical at 7 GHz to 16 GHz

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OIP3: 29 dBm typical at 7 GHz to 16 GHz

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Noise figure: 1.3 dB typical at 7 GHz to 16 GHz

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8-lead, 2 mm × 2 mm, LFCSP (see the Outline Dimensions

section)

APPLICATIONS

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Test instrumentation

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Military communications

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Radar

GENERAL DESCRIPTION

The ADL8107 is a gallium arsenide (GaAs), monolithic micro-

wave IC (MMIC), pseudomorphic high electron mobility transistor

(pHEMT), low noise, wideband, high linearity amplifier that operates

from 6 GHz to 18 GHz.

The ADL8107 provides a typical gain of 24 dB at 7 GHz to

16 GHz, a 1.3 dB typical noise figure at 7 GHz to 16 GHz, a

18.5 dBm typical output power for 1 dB compression (OP1dB) at

7 GHz to 16 GHz, and a typical output third-order intercept (OIP3)

of 29 dBm at 7 GHz to 16 GHz, requiring only 90 mA from a 5 V

drain supply voltage. This low noise amplifier has a high output sec-

ond-order intercept (OIP2) of 30.5 dBm typical at 7 GHz to 16 GHz,

making the ADL8107 suitable for military and test instrumentation

applications.

The ADL8107 also features inputs and outputs that are internally

matched to 50 Ω. The RFIN and RFOUT pins are internally ac-cou-

pled, and the bias inductor is also integrated, making the ADL8107

ideal for surface-mounted technology (SMT)-based, high density

applications.

The ADL8107 is housed in a RoHS-compliant, 2 mm × 2 mm,

8-lead LFCSP.

FUNCTIONAL BLOCK DIAGRAM

Figure 1.