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ADL8142ACPZN-R7 数据表(PDF) 1 Page - Analog Devices |
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ADL8142ACPZN-R7 数据表(HTML) 1 Page - Analog Devices |
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1 / 20 page ![]() Data Sheet ADL8142 GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz Rev. B DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Low noise figure: 1.6 dB typical at 27 GHz to 31 GHz ► Single positive supply (self biased) ► High gain: 27 dB typical at 27 GHz to 31 GHz ► High OIP3: 21.5 dBm typical at 27 GHz to 31 GHz ► RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP APPLICATIONS ► Satellite communication ► Telecommunications ► Civilian radar GENERAL DESCRIPTION The ADL8142 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142 provides a typical gain of 27 dB, a 1.6 dB typical noise figure, and a typical output third-order intercept (OIP3) of 21.5 dBm at 27 GHz to 31 GHz, requiring only 25 mA from a 2 V supply voltage. Note that the OIP3 can be improved with larger drain currents. The ADL8142 also features inputs and outputs that are ac-coupled and internally matched to 50 Ω, making it ideal for high capacity microwave radio applica- tions. The ADL8142 is housed in a RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP. FUNCTIONAL BLOCK DIAGRAM Figure 1. |
类似零件编号 - ADL8142ACPZN-R7 |
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类似说明 - ADL8142ACPZN-R7 |
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