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ADL8142ACPZN-R7 数据表(PDF) 1 Page - Analog Devices

部件名 ADL8142ACPZN-R7
功能描述  GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz
PDF  20 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL8142ACPZN-R7 数据表(HTML) 1 Page - Analog Devices

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Data Sheet
ADL8142
GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz
Rev. B
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Low noise figure: 1.6 dB typical at 27 GHz to 31 GHz
Single positive supply (self biased)
High gain: 27 dB typical at 27 GHz to 31 GHz
High OIP3: 21.5 dBm typical at 27 GHz to 31 GHz
RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP
APPLICATIONS
Satellite communication
Telecommunications
Civilian radar
GENERAL DESCRIPTION
The ADL8142 is a gallium arsenide (GaAs), monolithic microwave
integrated circuit (MMIC), pseudomorphic high electron mobility
transistor (pHEMT), low noise wideband amplifier that operates
from 23 GHz to 31 GHz. The ADL8142 provides a typical gain of
27 dB, a 1.6 dB typical noise figure, and a typical output third-order
intercept (OIP3) of 21.5 dBm at 27 GHz to 31 GHz, requiring only
25 mA from a 2 V supply voltage. Note that the OIP3 can be
improved with larger drain currents. The ADL8142 also features
inputs and outputs that are ac-coupled and internally matched to
50 Ω, making it ideal for high capacity microwave radio applica-
tions.
The ADL8142 is housed in a RoHS-compliant, 2 mm × 2 mm,
8-lead LFCSP.
FUNCTIONAL BLOCK DIAGRAM
Figure 1.


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