P3C1256

Page 3 of 10

Document # SRAM122 REV B

AC ELECTRICAL CHARACTERISTICS - READ CYCLE

(Over Recommended Operating Temperature & Supply Voltage)

(V

Symbol

Parameter

Test Conditions

Max

Unit

C

IN

C

OUT

Input Capacitance

Output Capacitance

V

V

10

10

pF

pF

Symbol

Parameter

Min

Unit

t

RC

ns

t

AA

Address Access Time

t

AC

Chip Enable Access

Time

t

OH

Output Hold from

Address Change

ns

t

LZ

Chip Enable to

Output in Low Z

ns

t

HZ

Chip Disable to

Output in High Z

ns

t

OE

Output Enable Low

to Data Valid

ns

t

OLZ

Output Enable Low to

Low Z

ns

t

OHZ

Output Enable High

to High Z

t

PU

Chip Enable to Power

Up Time

ns

t

PD

Chip Disable to

Power Down Time

ns

Read Cycle Time

2

2

0

-12

ns

ns

ns

-25

-20

-15

Max

Min

Max

25

25

25

2

2

10

12

0

10

0

20

Min

20

20

20

2

2

9

11

0

9

0

20

Max

Min

Max

15

15

15

2

2

8

9

0

7

0

15

12

12

12

7

7

0

6

12

*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.

The device is continuously enabled for writing, i.e., CE, and WE

and 3V.

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Unit

I

CC

Dynamic Operating Current

Commercial

Industrial

mA

mA

Temperature

Range

-12

110

N/A

-15

100

115

-20

95

110

-25

90

105

Test

Conditions

*

*