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P4C1023-70CWC 数据表(PDF) 6 Page - Pyramid Semiconductor Corporation

部件名 P4C1023-70CWC
功能描述  LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
PDF  11 Pages
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制造商  PYRAMID [Pyramid Semiconductor Corporation]
网页  http://www.pyramidsemiconductor.com
标志 PYRAMID - Pyramid Semiconductor Corporation

P4C1023-70CWC 数据表(HTML) 6 Page - Pyramid Semiconductor Corporation

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P4C1023/P4C1023L
Page 6 of 11
Document # SRAM126 REV OR
Write
Active
Read
TIMING WAVEFORM OF WRITE CYCLE NO.2 (CE
CE
CE
CE
CE CONTROLLED)(6)
* including scope and test fixture.
Note:
Because of the high speed of the P4C1023L, care must be taken when
testing this device; an inadequate setup can cause a normal function-
ing part to be rejected as faulty. Long high-inductance leads that cause
supply bounce must be avoided by bringing the V
CC and ground planes
directly up to the contactor fingers. A 0.01 µF high frequency capacitor
is also required between V
CC and ground.
To avoid signal reflections, proper termination must be used; for
example, a 50
Ω test environment should be terminated into a 50Ω
load with 1.77V (Thevenin Voltage) at the comparator input, and a
589
Ω resistor must be used in series with D
OUT to match 639Ω
(Thevenin Resistance).
AC TEST CONDITIONS
TRUTH TABLE
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figures 1 and 2
Mode
Standby
D
OUT Disabled
Standby
Power
I/O
WE
WE
WE
WE
WE
OE
OE
OE
OE
OE
CE
CE
CE
CE
CE
High Z
D
OUT
D
IN
X
H
H
L
X
H
L
X
H
L
L
L
Active
Active
High Z



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