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P4C1024L55CWC 数据表(PDF) 5 Page - Pyramid Semiconductor Corporation

部件名 P4C1024L55CWC
功能描述  LOW POWER 128K x 8 CMOS STATIC RAM
PDF  11 Pages
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制造商  PYRAMID [Pyramid Semiconductor Corporation]
网页  http://www.pyramidsemiconductor.com
标志 PYRAMID - Pyramid Semiconductor Corporation

P4C1024L55CWC 数据表(HTML) 5 Page - Pyramid Semiconductor Corporation

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P4C1024L
Page 5 of 10
Document # SRAM125 REV C
-55
Notes:
6. CE
1 and WE are LOW and CE2 is HIGH for WRITE cycle.
7. OE is LOW for this WRITE cycle to show twz and tow.
8. If CE
1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in a high impedance state.
9. Write Cycle Time is measured from the last valid address to the first transitioning address.
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE CONTROLLED)(6)
Symbol
Parameter
Max
-70
Max
Unit
Min
Min
t
WC
t
CW
t
AS
t
WP
t
AH
t
DH
t
WZ
t
OW
Write Cycle Time
55
70
ns
Chip Enable Time
to End of Write
50
60
ns
Address Valid to
End of Write
50
60
ns
Address Set-up
Time
00
ns
Write Pulse Width
40
50
ns
Address Hold
Time
00
ns
Data Valid to End
of Write
25
30
ns
Data Hold Time
00
ns
Write Enable to
Output in High Z
25
30
ns
Output Active from
End of Write
55
ns
t
AW
t
DW



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