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BFC46 数据表(PDF) 2 Page - Seme LAB

部件名 BFC46
功能描述  4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
PDF  2 Pages
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制造商  SEME-LAB [Seme LAB]
网页  http://www.semelab.co.uk
标志 SEME-LAB - Seme LAB

BFC46 数据表(HTML) 2 Page - Seme LAB

  BFC46 Datasheet HTML 1Page - Seme LAB BFC46 Datasheet HTML 2Page - Seme LAB  
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BFC46
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
5.5
22
1.3
160
320
640
1.5
3.0
6.0
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] , dls / dt = 100A/µs
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
180
180
22
SOA1
SOA2
ILM
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
W
W
A
Characteristic
Min.
Typ.
Max. Unit
0.68
40
RθJC
RθJA
Junction to Case
Junction to Ambient
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
pF
nC
ns
790
950
116
163
44
66
38
55
4.5
7
16
24
10
20
11
21
35
53
13
26
LAB
SEME
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.



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