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HTD3 数据表(PDF) 1 Page - Electronic devices inc. |
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HTD3 数据表(HTML) 1 Page - Electronic devices inc. |
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1 / 2 page ![]() HTD 3 Max. DC Reverse Current @ PRV @ 200 C,I Storage Temperature Range,T 18 typical 50 mA Ambient Operating Temperature Range O O ELECTRICAL CHARACTERISTICS (at TA O EDI TYPE NO. PEAK REVERSE VOL TAGE DIMENSIONS HTD 3 3,000V See Fig.3 1 mA 0.1 Max. DC Reverse Current @ PRV @ 25 C, I O O O O O O O Note1 I at 200 C readings are taken in oil after voltage R has been applied to device for 5 minutes. Exceptional high temperature Stability up t o 20 0 C Exceptionally low leakage Small size 3 KV P RV U 200 C High Temperature High Voltage Rectifier Diodes O O R R (See Note:1) 30 max See Note 2 -55 to+200 OC OC 25 V -55 to+200 OC OC A A A EDI reserves the rightto change these specifications at any time without notice. Our proprietary diffusion and passivation process provides this unusual stability and no leakage drift at these elevated temperatures. All diodes are subjected to 10 test temperature cycles from -55 C to + 200 C. O O Average Rectified Forward Current, @ 50 C I Average Rectified Forward Current, @ 200 C I Max. Forward Voltage Drop at 25 C and 10mA ,VF (Volts) =25 C Unless Otherwise Specified) Note 2 All diodes are hot forward swept for forward stability to maximum temperature of 200 C on dynamic display on curve trace oscilloscope. O Forward Stability Tj 200 C |
类似零件编号 - HTD3 |
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类似说明 - HTD3 |
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