VT1200 datasheet(1/2 Pages) EDI

部件名	VT1200

功能描述	HIGH VOLTAGE 50 mA SILICON RECTIFIERS

PDF	2 Pages

Scroll/Zoom	100%

制造商	EDI [Electronic devices inc.]

网页	http://www.edidiodes.com

标志

1 / 2 page

VT RVT

HIGH VOLTAGE 50 mA

SILICON RECTIFIERS

EDI

Type

PRV

Volts

REVERSE RECOVERY

TIME

(Fig.4)

VT1000

10,000

-

VT1200

12,000

-

VT1500

15,000

-

RVT1000

10,000

100 ns max.

RVT1200

12,000

100 ns max.

RVT1500

15,000

100 ns max.

ELECTRICAL CHARACTERISTICS (at TA=25 C Unless Otherwise Specified)

Average Rectified Forward Current @ 50

oC, I

O

50 mA

Max. Peak Surge Current, IFSM (8.3ms)

5 Amp

Max. Forward Voltage Drop @ 50 m

A, VF

28Volts

Max. DC Reverse Current @ PRV and 25

oC, IR

1

Max. DC Reverse Current @ PRV and100

oC, IR

25

Ambient Operating Temperature Range, TA

Storage Temperature Range, TSTG

NOTES:

o

A

SMALL SIZE MOLDED PACKAGE

PRV 10,000 TO 15,000 VOLTS

FAST RECOVERY (R_SERIES)

AVALANCHE CHARACTERISTICS

LOW LEAKAGE

-55 to + 125 C

o

-55 to + 150 C

o

1.It is recommended that a proper heat sink be used on the terminals of this device between the body and

soldering point to prevent damage from excess heat.

2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.

EDI reservesthe rightto changethese specificationsat any time withoutnotice.

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