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PM50CSD120 数据表(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PM50CSD120 数据表(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 8 page ![]() MITSUBISHI <INTELLIGENT POWER MODULES> PM50CSD120 FLAT-BASE TYPE INSULATED PACKAGE Jul. 2005 Parameter Symbol Supply Voltage Protected by OC & SC Supply Voltage (Surge) Module Case Operating Temperature Storage Temperature Isolation Voltage Condition VCC(surge) TC Tstg Viso Ratings VCC(PROT) 800 1000 –20 ~ +100 –40 ~ +125 2500 Unit V °C °C Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125 °C Start Applied between : P-N, Surge value or without switching (Note-1) 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) TC measurement point is as shown below. (Base plate depth 3mm) TOTAL SYSTEM WV U Tc 65mm ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise noted) INVERTER PART 3.2 2.8 3.5 2.5 0.3 1.0 3.5 1.2 1 10 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current –IC = 50A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25 °C Tj = 125 °C Parameter Symbol Test Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits — — — 0.5 — — — — — — 2.4 2.1 2.5 1.0 0.15 0.4 2.5 0.7 — — Tj = 25 °C Tj = 125 °C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 15V ↔0V VCC = 600V, IC = 50A Tj = 125 °C Inductive Load (upper and lower arm) (Fig. 3) VCE = VCES, VCIN = 15V (Fig. 4) VD = 15V, IC = 50A VCIN = 0V, Pulsed (Fig. 1) V mA V µs Unit 0.38 0.70 0.23 0.36 0.027 °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Inverter IGBT part (per 1 element), (Note-1) Inverter FWDi part (per 1 element), (Note-1) Inverter IGBT part (per 1 element), (Note-2) Inverter FWDi part (per 1 element), (Note-2) Case to fin, Thermal grease applied (per 1 module) Symbol Parameter Test Condition Unit Limits Min. Typ. Max. — — — — — — — — — — Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance (Note-2) TC measurement point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. |
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