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IDT7130LA55PFG 数据表(PDF) 9 Page - Integrated Device Technology |
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IDT7130LA55PFG 数据表(HTML) 9 Page - Integrated Device Technology |
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9 / 19 page ![]() 9 IDT7130SA/LA and IDT7140SA/LA High-Speed 1K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle No. 2, Either Side(3) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is deaserted first, OE or CE. 3. R/ W = VIH and OE = VIL, and the address is valid prior to or coincidental with CE transition LOW. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. Timing Waveform of Read Cycle No. 1, Either Side(1) ADDRESS DATAOUT tRC tOH PREVIOUS DATA VALID tAA tOH DATA VALID 2689 drw 08 tBDDH (2,3) BUSYOUT NOTES: 1. R/ W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW. 2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same the address location. For simultaneous read operations, BUSY has no relationship to valid output data. 3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. CE tACE tAOE tHZ tLZ tPD VALID DATA tPU 50% OE DATAOUT CURRENT ICC ISS 50% 2689 drw 09 (4) (1) (1) (2) (2) (4) tLZ tHZ |
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