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STB140NF55 数据表(PDF) 5 Page - STMicroelectronics

部件名 STB140NF55
功能描述  N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™II Power MOSFET
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB140NF55 数据表(HTML) 5 Page - STMicroelectronics

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STB140NF55 - STB140NF55-1 - STP140NF55
Electrical characteristics
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Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 27.5 V, ID = 40A
RG =4.7Ω , VGS = 10V
(see Figure 13)
30
150
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
VDD = 27.5V, ID = 40A,
RG =4.7Ω, VGS = 10V
(see Figure 13)
125
45
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited safe operating area
Source-drain current
Source-drain current (pulsed)
80
320
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 80A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, di/dt = 100 A/µs,
VDD = 20V, Tj = 150°C
(see Figure 15)
90
275
6.5
ns
nC
A



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