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PD55035 数据表(PDF) 1 Page - STMicroelectronics

部件名 PD55035
功能描述  RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

PD55035 数据表(HTML) 1 Page - STMicroelectronics

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May 2006
Rev 1
1/22
22
PD55035-E
PD55035S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 35W with 16.9dB gain @ 500MHz /
12.5V
■ New RF plastic package
Description
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. PD55035 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first
true SMD plastic RF power package,
PowerSO-10RF. PD55035’s superior linearity
performance makes it an ideal solution for car
mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
www.st.com
Order codes
Part number
Package
Packing
PD55035-E
PowerSO-10RF (formed lead)
Tube
PD55035S-E
PowerSO-10RF (straight lead)
Tube
PD55035TR-E
PowerSO-10RF (formed lead)
Tape and reel
PD55035STR-E
PowerSO-10RF (straight lead)
Tape and reel


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