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EMC2101-R-ACZL-TR 数据表(PDF) 15 Page - Microchip Technology |
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EMC2101-R-ACZL-TR 数据表(HTML) 15 Page - Microchip Technology |
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15 / 56 page ![]() 2022 Microchip Technology Inc. and its subsidiaries DS20006703A-page 15 EMC2101 4.5 Temperature Monitors In general, thermal diode temperature measurements are based on the change in forward bias voltage of a diode when operated at two different currents. The change in forward bias voltage is proportional to absolute temperature (T), as shown in Equation 4-1. EQUATION 4-1: FIGURE 4-3: Block Diagram of Temperature Monitoring Circuit. Figure 4-3 shows a block diagram of the temperature measurement circuit. As shown, the EMC2101 incorporates a delta-sigma analog to digital converter that integrates the temperature diode voltage from multiple bias currents. V BE kT q ----------1n IHIGH ILOW -------------- = Where: k = Boltzmann’s constant T = Absolute temperature in Kelvin q = Electron charge η = Diode ideality factor ΔΣ |
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