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VEC2811 数据表(PDF) 2 Page - Sanyo Semicon Device

部件名 VEC2811
功能描述  MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
PDF  6 Pages
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

VEC2811 数据表(HTML) 2 Page - Sanyo Semicon Device

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VEC2811
No.8287-2/6
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
µA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--1.5A
2.0
3.4
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--1.5A, VGS=--10V
65
86
m
RDS(on)2
ID=--0.7A, VGS=--4V
117
168
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
510
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
115
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
78
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11
ns
Rise Time
tr
See specified Test Circuit.
17
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
53
ns
Fall Time
tf
See specified Test Circuit.
35
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--3A
11
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--3A
2.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--3A
1.7
nC
Diode Forward Voltage
VSD
IS=--3A, VGS=0V
--0.87
--1.2
V
[SBD]
Reverse Voltage
VR
IR=2mA
30
V
Forward Voltage
VF
IF=2A
0.4
0.45
V
Reverse Current
IR
VR=15V
1.25
mA
Interterminal Capacitance
C
VR=10V, f=1MHz
75
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
20
ns
Package Dimensions
Electrical Connection
unit : mm
7012-004
2.9
0.65
0.3
123
4
87
6 5
0.15
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : VEC8
87
6
5
123
4
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
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