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VEC2811 数据表(PDF) 2 Page - Sanyo Semicon Device |
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VEC2811 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 6 page ![]() VEC2811 No.8287-2/6 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V --1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V Forward Transfer Admittance yfs VDS=--10V, ID=--1.5A 2.0 3.4 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--1.5A, VGS=--10V 65 86 m Ω RDS(on)2 ID=--0.7A, VGS=--4V 117 168 m Ω Input Capacitance Ciss VDS=--10V, f=1MHz 510 pF Output Capacitance Coss VDS=--10V, f=1MHz 115 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr See specified Test Circuit. 17 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 53 ns Fall Time tf See specified Test Circuit. 35 ns Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 11 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 2.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 1.7 nC Diode Forward Voltage VSD IS=--3A, VGS=0V --0.87 --1.2 V [SBD] Reverse Voltage VR IR=2mA 30 V Forward Voltage VF IF=2A 0.4 0.45 V Reverse Current IR VR=15V 1.25 mA Interterminal Capacitance C VR=10V, f=1MHz 75 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 20 ns Package Dimensions Electrical Connection unit : mm 7012-004 2.9 0.65 0.3 123 4 87 6 5 0.15 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 87 6 5 123 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view |
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