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MBR20100CT 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBR20100CT 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() Dimensions in inches and (millimeters) Version: A06 MBR2035CT - MBR20150CT 20.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC TO-220AB molded plastic Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBR 2035 CT MBR 2045 CT MBR 2050 CT MBR 2060 CT MBR 2090 CT MBR 20100 CT MBR 20150 CT Units Maximum Recurrent Peak Reverse Voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS Voltage VRMS 24 31 35 42 63 70 105 V Maximum DC Blocking Voltage VDC 35 45 50 60 90 100 150 V Maximum Average Forward Rectified Current at TC=135 oC I(AV) 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=135oC IFRM 20 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 1.0 0.5 A Maximum Instantaneous Forward Voltage at (Note 2) IF=10A, TC=25OC IF=10A, TC=125OC IF=20A, TC=25OC IF=20A, TC=125OC VF - 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.85 0.75 0.95 0.85 0.99 0.87 1.23 1.10 V 0.1 0.1 Maximum Instantaneous Reverse Current @ Tc=25 ℃ at Rated DC Blocking Voltage @ Tc=125 ℃ IR 15 10 5.0 mA mA Voltage Rate of Change, (Rated VR) dV/dt 10,000 V/uS Typical Junction Capacitance Cj 400 320 pF Typical Thermal Resistance Per Leg (Note 3) RθJC 1.0 2.0 oC/W Operating Junction Temperature Range TJ -65 to +150 oC Storage Temperature Range T STG -65 to +175 oC Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate. |
类似零件编号 - MBR20100CT |
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类似说明 - MBR20100CT |
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