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MBRF735 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBRF735 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 110 - MBRF735 THRU MBRF7100 Isolation 7.5 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 7.5 Amperes Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: ITO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams ITO-220AC Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBRF 735 MBRF 745 MBRF 750 MBRF 760 MBRF 790 MBRF 7100 Units Maximum Recurrent Peak Reverse Voltage VRRM 35 45 50 60 90 100 V Maximum RMS Voltage VRMS 24 31 35 42 63 70 V Maximum DC Blocking Voltage VDC 35 45 50 60 90 100 V Maximum Average Forward Rectified Current See Fig. 1 I(AV) 7.5 A Peak Repetitive Forward Current (Square Wave, 20KHz) at Tc=105 oC IFRM 15.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 1.0 0.5 A Maximum Instantaneous Forward Voltage at (Note 2) IF=7.5A,Tc=25 ℃ IF=7.5A,Tc=125 ℃ IF=15A,Tc=25 ℃ IF=15A,Tc=125 ℃ VF – 0.57 0.84 0.72 0.75 0.65 – -- 0.92 0.82 – -- V Maximum Instantaneous Reverse Current @ Tc =25 ℃ at Rated DC Blocking Voltage (Note 1) @ Tc=125 ℃ IR 0.1 15.0 0.5 1,000 0.1 - mA mA Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS Maximum Thermal Resistance, (Note 3) R θJC 7.0 ℃/W Typical Junction Capacitance Cj 350 280 200 pF Operating Junction Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +175 ℃ Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-plate. .071(1.8) MAX .161(4.1) .146(3.7) .118(3.00) .124(3.16) .185(4.7) .173(4.4) .272(6.9) .248(6.3) .063(1.6) MAX .100(2.55) .543(13.8) .512(13.2) .100(2.55) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA 2 PIN 1 PIN 2 Case Positive |
类似零件编号 - MBRF735 |
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类似说明 - MBRF735 |
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