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MBRF760 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 MBRF760
功能描述  Isolated 7.5 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

MBRF760 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  MBRF760 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd MBRF760 Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
- 94 -
Version: B07
MBRF735 - MBRF7150
Isolated 7.5 AMPS. Schottky Barrier Rectifiers
ITO-220AC
.071(1.8)
MAX
.161(4.1)
.146(3.7)
.118(3.00)
.124(3.16)
.185(4.7)
.173(4.4)
.272(6.9)
.248(6.3)
.063(1.6)
MAX
.100(2.55)
.543(13.8)
.512(13.2)
.100(2.55)
.110(2.8)
.098(2.5)
.606(15.5)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.043(1.1)
.020(0.5)
.035(0.9)
.055(1.4)
.030(0.76)
.020(0.50)
2
PIN 1
PIN 2
Case Positive
CASE
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF
735
MBRF
745
MBRF
750
MBRF
760
MBRF
790
MBRF
7100
MBRF
7150
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
150
V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
7.5
A
Peak Repetitive Forward Current (Square Wave, 20KHz) at
Tc=105oC
IFRM
15.0
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at (Note 2)
IF=7.5A,Tc=25
oC
IF=7.5A,Tc=125
oC
IF=15A,Tc=25
oC
IF=15A,Tc=125
oC
VF
0.57
0.84
0.72
0.75
0.65
0.92
0.82
-
-
1.02
0.92
-
-
V
Maximum Instantaneous Reverse Current @ Tc =25 oC
at Rated DC Blocking Voltage (Note 1)
@ Tc=125 oC
IR
0.1
15
0.1
10
0.1
5.0
mA
mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj
350
280
200
pF
Maximum Thermal Resistance, (Note 3)
RθJC
7.0
oC/W
Operating Junction Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
TSTG
-65 to +175
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-plate.


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