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MBRF1035 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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MBRF1035 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 130 - .071(1.8) MAX .161(4.1) .146(3.7) .118(3.00) .124(3.16) .185(4.7) .173(4.4) .272(6.9) .248(6.3) .063(1.6) MAX .100(2.55) .543(13.8) .512(13.2) .100(2.55) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA 2 MBRF1035 THRU MBRF10100 Isolation 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 10.0 Amperes Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260 oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: ITO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams ITO-220AC Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol MBRF 1035 MBRF 1045 MBRF 1050 MBRF 1060 MBRF 1090 MBRF 10100 Units Maximum Recurrent Peak Reverse Voltage VRRM 35 45 50 60 90 100 V Maximum RMS Voltage VRMS 24 31 35 42 63 70 V Maximum DC Blocking Voltage VDC 35 45 50 60 90 100 V Maximum Average Forward Rectified Current See Fig. 1 I(AV) 10 A Peak Repetitive Forward Current (Square Wave, 20KHz) at Tc=135 oC IFRM 20.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Peak Repetitive Reverse Surge Current (Note 1) IRRM 1.0 0.5 A Voltage Rate of Change (Rated VR) dV/dt 10,000 V/uS Maximum Instantaneous Forward Voltage at (Note 2) IF=10A, Tc=25 OC IF=10A, Tc=125 OC IF=20A, Tc=25 OC IF=20A, Tc=125 OC VF - 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.85 0.71 - - V Maximum Instantaneous Reverse Current @ Tc =25 ℃at Rated DC Blocking Voltage (Note 2) @ Tc=125 ℃ IR 0.1 15.0 0.1 6.0 mA mA Typical Junction Capacitance Cj 390 300 220 pF Maximum Thermal Resistance, Junction to Case (Note 3) R θJC 4.0 ℃/W Operating Junction Temperature Range TJ -65 to +150 ℃ Storage Temperature Range T STG -65 to +175 ℃ Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. |
类似零件编号 - MBRF1035 |
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类似说明 - MBRF1035 |
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