- 174 -

M B R F2035C T TH R U M B R F20200C T

Isolation 20.0 A M P S . S chottky B arrier R ectifiers

V oltage R ange

35 to 200 V olts

C urrent

20.0 A m peres

Features

P lastic m aterial used carries U nderw riters

Laboratory C lassifications 94V -0

M etal silicon junction, m ajority carrier conduction

Low pow er loss, high efficiency

H igh current capability, low forw ard voltage drop

H igh surge capability

For use in low voltage, high frequency inverters,

free w heeling, and polarity protection applications

G uardring for overvoltage protection

H igh tem perature soldering guaranteed:

260

M echanical D ata

C ases: ITO -220A B m olded plastic

Term inals: Leads solderable per M IL-S TD -750,

M ethod 2026

P olarity: A s m arked

M ounting position: A ny

M ounting torque: 5 in. - lbs. m ax

W eight:

0.08 ounce, 2.24 gram s

ITO -220A B

D im ensions in inch es and (m illim eters)

M axim um R atings and E lectrical C haracteristics

R ating at 25

℃ ambient temperature unless otherwise specified.

S ingle phase, half w ave, 60 H z, resistive or inductive load.

For capacitive load, derate current by 20%

Type N um ber

Sym bol

M BRF

2035

CT

M BRF

2045

CT

M BRF

2050

CT

M BRF

2060

CT

M BRF

20100

CT

M BRF

20150

CT

MB R F

20200

CT

Units

M axim um R ecurrent P eak R everse V oltage

35

45

50

60

100

150

200

V

Maximum R M S V oltage

24

31

35

42

70

105

140

V

M axim um D C B locking V oltage

35

45

50

60

100

150

200

V

M axim um A verage Forw ard R ectified C urrent at

Total device

P er Leg

20

10

A

S quare W ave, 20K H z) at Tc=135

20.0

A

P eak Forw ard S urge C urrent, 8.3 m s S ingle H alf

S ine-w ave S uperim posed on R ated Load (JE D E C

m ethod )

150

A

P eak R epetitive R everse S urge C urrent (N ote 1)

1.0

0.5

A

M axim um Instantaneous Forw ard V oltage at (N ote 2)

-

0.57

0.84

0.72

0.80

0.70

0.95

0.85

0.85

0.75

0.95

0.85

0.99

0.87

1.23

1.10

V

M axim um Instantaneous R everse C urrent @ Tc=25

℃

at R ated D C B locking V oltage

@ Tc=125

℃

0.1

15.0

0.15

150.0

mA

dV /dt

10,000

V/uS

Typical Therm al R esistance P er Leg (N ote 3) R

θ JC

R

1.5

3.5

℃ /W

Typical Junction C apacitance

Cj

400

310

pF

R M S Isolation V oltage (M B R F Type O nly) from

Term inals to H eatsink w ith t=1.0 S econd, R H

≦ 30%

4500 (N ote 4)

3500 (N ote 5)

1500 (N ote 6)

V

-65 to +150

℃

-65 to +175

℃

N otes: 1. 2.0us P ulse W idth, f=1.0 K H z

2. P ulse Test: 300us P ulse W idth, 1% D uty C ycle

3. T herm al R esistance from Junction to C ase P er Leg, w ith H eatsink S ize (4”x6”x0.25”) A l-P late

4. C lip m ounting (on case), w here lead does not overlap heatsink w ith 0.110” offset.

5. C lip M ounting (on case), w here leads do overlap heatsink.

6. S crew M ounting w ith 4-40 screw , w here w asher diam eter is

≦ 4.9 mm (0.19”)

.272(6.9)

.248(6.3)

.543(13.8)

.512(13.2)

.110(2.8)

.098(2.5)

.606(15.5)

.583(14.8)

.112(2.85)

.100(2.55)

.134(3.4)DIA

.113(3.0)DIA

PIN 1

PIN 3

PIN 2