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MBRF25150CT 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 MBRF25150CT
功能描述  Isolated 25.0 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

MBRF25150CT 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  MBRF25150CT Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd MBRF25150CT Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
Version: A06
MBRF2535CT - MBRF25150CT
Isolated 25.0 AMPS. Schottky Barrier Rectifiers
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AB molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in-lbs. Max.
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF
2535
CT
MBRF
2545
CT
MBRF
2550
CT
MBRF
2560
CT
MBRF
2590
CT
MBRF
25100
CT
MBRF
25150
CT
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
150
V
Maximum W orking Peak Reverse Voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
150
V
Maximum Average Forward Rectified Current at
TC=130
oC
Total device
Per Leg
I(AV)
25
12.5
A
Peak Repetitive Forward Current Per leg (Rated VR,
Square W ave, 20KHz) at Tc=130
oC
IFRM
25
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
200
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at (Note 2)
IF=12.5A, Tc=25
oC
IF=12.5A, Tc=125
oC
IF=25A, Tc=25
oC
IF=25A, Tc=125
oC
VF
0.82
0.73
0.75
0.65
0.85
0.75
0.92
0.88
0.95
0.92
1.02
0.98
V
Maximum Instantaneous Reverse Current
@ Tc=25
oC at Rated DC Blocking Voltage Per Leg
@ Tc=125
oC
IR
0.2
15
0.2
10
0.1
7.5
0.1
5
mA
mA
Voltage Rate of Change, (Rated VR)
dV/dt
1,000
V/uS
Typical Junction Capacitance
Cj
580
480
pF
RMS Isolation Voltage (MBRF Type only) from
Terminals to Heatsink with t=1.0 second, RH
≦30%
VISO
4500 (Note 4)
3500 (Note 5)
1500 (Note 6)
V
Maximum Thermal Resistance Per Leg (Note 3)
RθJA
RθJC
8.0
1.0
oC/W
Operating Junction Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
T
STG
-65 to +175
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.
4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip Mounting (on case), where leads do overlap heatsink.
6. Screw Mounting with 4-40 screw, where washer diameter is
≦4.9 mm (0.19”).


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