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31DF4 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 31DF4
功能描述  3.0 AMPS. Super Fast Rectifiers
PDF  2 Pages
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

31DF4 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  31DF4 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd 31DF4 Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
Version: A06
31DF4 - 31DF6
3.0 AMPS. Super Fast Rectifiers
DO-201AD
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss.
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, Lead free., solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260
oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.2 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
31DF4
31DF6
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
400
600
V
Maximum RMS Voltage
VRMS
280
420
V
Maximum DC Blocking Voltage
VDC
400
600
V
Maximum Average Forward Rectified Current
.375 (9.5mm) Lead Length @TA = 29
oC
(Note 1)
@TL = 109
oC
I(AV)
1.2
3.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
45
A
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
1.7
V
Maximum DC Reverse Current @ TA=25
oC
at Rated DC Blocking Voltage
@ TA=125
oC
IR
20
100
uA
Maximum Reverse Recovery Time (Note 3)
Trr
35
nS
Typical Thermal Resistance ( Note 2 )
RθJA
80
oC/W
Operating Temperature Range
TJ
-40 to +150
oC
Storage Temperature Range
TSTG
-40 to +150
oC
Notes:
1. Without Fin or P.C.Board..
2. Thermal Resistance from Junction to Ambient .375” (9.5mm) Lead Length.
3. Reverse recovery Test Condition: Ta = 25
℃, IFM=3A, di/dt = 50A / Us.


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