STD65NF06 datasheet(3/14 Pages) STMICROELECTRONICS

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STD65NF06 - STP65NF06

Electrical ratings

3/14

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate- source voltage

± 20

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

240

Ptot

Total dissipation at TC = 25°C

110

Derating Factor

0.73

W/°C

dv/dt (2)

ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(3)

Starting Tj = 25 °C, ID = 30A, VDD = 40V

Single pulse avalanche energy

390

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

Table 2.

Thermal data

Symbol

Parameter

TO-220

DPAK

Unit

Rthj-case

Thermal resistance junction-case max

1.36

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb(1)

When mounted on FR-4 of 1 inch², 2 oz Cu

Thermal resistance junction-pcb max

°C/W

Maximum lead temperature for soldering

purpose (for 10sec. 1.6mm from case)

300

°C/W

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