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TIP41C 数据表(PDF) 2 Page - Power Innovations Ltd

部件名 TIP41C
功能描述  NPN SILICON POWER TRANSISTORS
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  POINN [Power Innovations Ltd]
网页  http://www.bourns.com
标志 POINN - Power Innovations Ltd

TIP41C 数据表(HTML) 2 Page - Power Innovations Ltd

  TIP41C Datasheet HTML 1Page - Power Innovations Ltd TIP41C Datasheet HTML 2Page - Power Innovations Ltd TIP41C Datasheet HTML 3Page - Power Innovations Ltd TIP41C Datasheet HTML 4Page - Power Innovations Ltd TIP41C Datasheet HTML 5Page - Power Innovations Ltd TIP41C Datasheet HTML 6Page - Power Innovations Ltd  
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TIP41, TIP41A, TIP41B, TIP41C
NPN SILICON POWER TRANSISTORS
2
DECEMBER 1970 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
TIP41
TIP41A
TIP41B
TIP41C
40
60
80
100
V
ICES
Collector-emitter
cut-off current
VCE = 80 V
VCE = 100 V
VCE = 120 V
VCE = 140 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
TIP41
TIP41A
TIP41B
TIP41C
0.4
0.4
0.4
0.4
mA
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB = 0
IB = 0
TIP41/41A
TIP41B/41C
0.7
0.7
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC = 0
1
mA
hFE
Forward current
transfer ratio
VCE =
4 V
VCE =
4 V
IC = 0.3 A
IC =
3 A
(see Notes 5 and 6)
30
15
75
VCE(sat)
Collector-emitter
saturation voltage
IB =
0.6 A
IC =
6 A
(see Notes 5 and 6)
1.5
V
VBE
Base-emitter
voltage
VCE =
4 V
IC =
6 A
(see Notes 5 and 6)
2
V
hfe
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
|h
fe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.92
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
†
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = 6 A
VBE(off) = -4 V
IB(on) = 0.6 A
RL = 5 Ω
IB(off) = -0.6 A
tp = 20 µs, dc ≤ 2%
0.6
µs
toff
Turn-off time
1
µs



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