TIP48 datasheet(2/7 Pages) POINN

2 / 7 page

TIP47, TIP48, TIP49, TIP50

NPN SILICON POWER TRANSISTORS

DECEMBER 1971 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 30 mA

(see Note 5)

IB = 0

TIP47

TIP48

TIP49

TIP50

250

300

350

400

ICES

Collector-emitter

cut-off current

VCE = 350 V

VCE = 400 V

VCE = 450 V

VCE = 500 V

VBE = 0

TIP47

TIP48

TIP49

TIP50

ICEO

Collector cut-off

current

VCE = 150 V

VCE = 200 V

VCE = 250 V

VCE = 300 V

IB = 0

TIP47

TIP48

TIP49

TIP50

IEBO

Emitter cut-off

current

VEB =

5 V

IC = 0

hFE

Forward current

transfer ratio

VCE =

10 V

VCE =

10 V

IC = 0.3 A

IC =

1 A

(see Notes 5 and 6)

150

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.2 A

IC =

1 A

(see Notes 5 and 6)

VBE

Base-emitter

voltage

VCE =

10 V

IC =

1 A

(see Notes 5 and 6)

1.5

hfe

Small signal forward

current transfer ratio

VCE =

10 V

IC = 0.2 A

f = 1 kHz

fe|

Small signal forward

current transfer ratio

VCE =

10 V

IC = 0.2 A

f = 2 MHz

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

†

MIN

TYP

MAX

UNIT

ton

Turn on time

IC = 1 A

VBE(off) = -5 V

IB(on) = 0.1 A

RL = 200 Ω

IB(off) = -0.1 A

(see Figures 1 and 2)

0.2

µs

toff

Turn off time

µs

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