STP9NK60ZD datasheet(3/16 Pages) STMICROELECTRONICS

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STB9NK60ZD - STF9NK60ZD - STP9NK60ZD

Electrical ratings

3/16

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK/TO-220

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate- source voltage

± 30

Drain current (continuos) at TC = 25°C

7 (1)

Limited only by maximum temperature allowed

Drain current (continuos) at TC = 100°C

4.3

4.3 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

28 (1)

PTOT

Total dissipation at TC = 25°C

125

Derating factor

0.24

W/°C

VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ)

4000

dv/dt (3)

ISD < 7A, di/dt < 500A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1s;TC=25°C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

TO-220/D²PAK

TO-220FP

Rthj-pcb

Thermal resistance junction-pcb Max

(when mounted on minimum footprint)

°C/W

Rthj-case Thermal resistance junction-case Max

4.16

°C/W

Rthj-amb Thermal resistance junction-ambient Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

235

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