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USKB 数据表(PDF) 5 Page - Shindengen Electric Mfg.Co.Ltd

部件名 USKB
功能描述  SILICON BRIDGE DIODES
PDF  6 Pages
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制造商  SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
网页  http://www.shindengen.co.jp/
标志 SHINDENGEN - Shindengen Electric Mfg.Co.Ltd

USKB 数据表(HTML) 5 Page - Shindengen Electric Mfg.Co.Ltd

  USKB Datasheet HTML 1Page - Shindengen Electric Mfg.Co.Ltd USKB Datasheet HTML 2Page - Shindengen Electric Mfg.Co.Ltd USKB Datasheet HTML 3Page - Shindengen Electric Mfg.Co.Ltd USKB Datasheet HTML 4Page - Shindengen Electric Mfg.Co.Ltd USKB Datasheet HTML 5Page - Shindengen Electric Mfg.Co.Ltd USKB Datasheet HTML 6Page - Shindengen Electric Mfg.Co.Ltd  
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background image
US15KB80R
US30KB80R
CHARACTERISTIC DIAGRAMS
0
0
10
20
40
30
50
20
40
80
60
100
160
120
140
0
0.1
0.2
0.5
1
2
5
10
20
50
0.4
0.2
0.6
1
0.8
1.4
1.2
1.6
Forward Voltage
Forward Power Dissipation
Derating Curve Tc-Io
Tc
heatsink
Tc−sensing point
0
0
0.5
1.5
1
2.5
2
3
20
40
80
60
100
160
120
140
Derating Curve Ta-Io
P.C.B
on glass−epoxy substrate
soldering land 3mm φ
Peak Surge Forward Current Capability
Forward Voltage
Forward Power Dissipation
0
0
0.5
1.5
1
2.5
2
3
20
40
80
60
100
160
120
140
Derating Curve Ta-Io
P.C.B
on glass−epoxy substrate
soldering land 3mm φ
Derating Curve Tc-Io
Peak Surge Forward Current Capability
0
0
5
10
15
20
25
30
35
40
51015
20
1
0
50
100
150
200
250
25
10
20
100
50
Peak Surge Forward Current Capability
non−repetitive
sine wave
Tj=25℃
8.3ms
8.3ms
1cycle
0
0
4
12
8
20
16
24
20
40
80
60
100
160
120
140
Tc
heatsink
Tc−sensing point
0
0.1
0.2
0.5
1
2
5
10
20
100
50
0.4
0.2
0.6
1
0.8
1.4
1.2
1.6
1
0
100
200
300
400
500
25
10
20
100
50
Peak Surge Forward Current Capability
non−repetitive
sine wave
Tj=25℃
8.3ms
8.3ms
1cycle
1
100
200
500
1000
2000
25
4
36
7 8.3
non−repetitive
sine wave
tp
3
20
50
100
200
500
1000
46
57
8.3
non−repetitive
sine wave
tp
0
0
10
30
20
60
50
40
70
80
510
20
15
25
40
30
35
Tc
heatsink
Tc−sensing point
Tj=150℃
Tj=25℃
Tj=150℃
Tj=25℃
Forward Voltage VF［V］
Average Rectified Forward Current Io［A］
Number of Cycles ［cycle］
Case Temperature Tc［℃］
Ambient Temperature Ta［℃］
Pulse Wide tp［ms］
Forward Voltage VF［V］
Average Rectified Forward Current Io［A］
Number of Cycles ［cycle］
Ambient Temperature Ta［℃］
Case Temperature Tc［℃］
Pulse Wide tp［ms］
Tc=150℃［TYP］
Tc= 25℃［TYP］
Tc=150℃［TYP］
Tc= 25℃［TYP］
SIN
SIN
SIN
SIN
SIN
SIN
tp
TD=tp/T
Io
Tj=150℃
tp
TD=tp/T
Io
Tj=150℃
Pulse measurement per diode
Sine wave
R-load
With heatsink
Sine wave
R-load
Free in air
Pulse measurement per diode
Sine wave
R-load
With heatsink
Sine wave
R-load
Free in air
CAT.No.TJ 536



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