TYN612MFPRG datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

TYN612M

Characteristics

3/8

Figure 3.

Average and D.C. on-state current

versus case temperature

(TO-220FPAB)

Figure 4.

Relative variation of thermal

impedance versus pulse duration

(TO-220AB)

100

125

(A)

T(AV)

T (°C)

α = 180°

D.C.

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

K=[Z /R ]

t (s)

Rth(j-c)

Rth(j-a)

Figure 5.

Relative variation of thermal

impedance versus pulse duration

(TO-220FPAB)

Figure 6.

Relative variation of gate trigger

current, holding current, latching

current and gate trigger voltage

versus junction temperature

(typical values)

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

K=[Z /R ]

t (s)

Rth(j-c)

Rth(j-a)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-40 -30 -20 -10

10 20 30 40 50 60 70 80 90 100 110 120 130

GT,IH,IL, VGT [Tj]/IGT,IH,IL, VGT [Tj=25°C]

H & IL

VGT

T (°C)

Figure 7.

Surge peak on-state current versus

number of cycles

Figure 8.

Non-repetitive surge peak on-state

current for a sinusoidal pulse with

width tp < 10 ms, and

corresponding values of I²t

100

110

120

130

100

1000

(A)

TSM

Number of cycles

Non repetitive

T initial=25°C

Repetitive

T =105°C

O ne cycle

tp=10m s

100

1000

0.01

0.10

1.00

10.00

(A), I t (A s)

TSM

t (ms)

T initial=25°C

ITSM

I t

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