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TS3405CS 数据表(PDF) 7 Page - Taiwan Semiconductor Company, Ltd |
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TS3405CS 数据表(HTML) 7 Page - Taiwan Semiconductor Company, Ltd |
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7 / 10 page ![]() Application Guidelines Component Selection Input Capacitor Use a mix of input bypass capacitors to control the voltage overshoot across the MOSFETs. Use small ceramic capacitors for high frequency decoupling and bulk capacitors to supply the current needed each time Q1 turn on. Place the small ceramic capacitors physically close to the MOSFETs and between the drain of high side MOSFET (Q1) and the source of low side MOSFET (Q2). The important parameters for the bulk input capacitor are the voltage rating and the RMS current rating. For reliable operation, select the bulk capacitor with voltage and current rating above the maximum input voltage and largest RMS current required by the circuit. The capacitor voltage rating should be at least 1.25 times greater than the maximum input voltage and a voltage rating of 1.5 times is a conservative guideline. The RMS current rating requirement for the input capacitor of a buck regulator is approximately 1/2 the DC load current. For a through hole design, several electrolytic capacitors may be needed. For surface mount designs, solid tantalum capacitors can be used, but caution must be exercised with regard to the capacitor surge current rating. These capacitors must be capable of handling the surge-current at power-up. Some capacitor series available from reputable manufacturers are surge current tested. MOSFET The TS3405 requires 2 N-channel power MOSFETs. These should be selected based upon Rds(on), gate supply requirements, and thermal management requirements. In high-current applications, the MOSFET power dissipation, package selection and heatsink are the dominant design factors. The power dissipation includes two loss components; conduction loss and switching loss. The conduction losses are the largest component of power dissipation for both the upper and the lower MOSFETs. These losses are distributed between the two MOSFETs according to duty factor. The switching losses seen when sourcing current will be different from the switching losses seen when sinking current. When sourcing current, the upper MOSFET realizes most of the switching losses. The lower switch realizes most of the switching losses when the converter is sinking current (see the equations below). These equations assume linear voltage current transitions and do not adequately model power loss due the reverse-recovery of the upper and lower MOSFET’s body diode. The gate-charge losses are dissipated by the TS3405 and do not heat the MOSFETs. However, large gate-charge increases the switching interval, tSW which increases the MOSFET switching losses. Ensure that both MOSFETs are within their maximum junction temperature at high ambient temperature by calculating tempature rise according to package thermal-resistance specifications. a separate heatsink may be necessary depending upon MOSFET power, package type, ambient temperature and air flow. Losses while sourcing current: PUPPER= Io 2 x Rds(on) x D + ½ Io x Vin x t SW x FS PLOWER= Io 2 x Rds(on) x (1– D) Losses while sinking current: PUPPER= Io 2 x Rds(on) x D PLOWER= Io 2 x Rds(on) x (1–D) + ½ Io x Vin x t SW x FS Where: D is the duty cycle = Vout / Vin tSW is the combined switch ON and OFF time FS is the switching frequency Given the reduced available gate bias voltage (5V), logic-level or sub-logic-level transistors should be used for both N-MOSFETs. Caution should be exercised with devices exhibiting very low Vgs(on) characteristics. The shoot through protection present aboard the TS3405 may be circumvented by there MOSFETs if they have large parasitic impedances and /or capacitances that would inhibit the gate of the MOSFET from being discharged below it’s threshold level before the complementary MOSFET is turned on. FIGURE 5、Upper Gate drive bootstrap. Fig. 5 shows the upper gate drive (Boot pin) supplied by a bootstrap circuit from Vcc. The boot capacitor. CBOOT, develops a floating supply voltage referenced to the Phase pin. The supply is refreshed to a voltage of Vcc less the boot diode drop (VDP) each time the lower MOSFET turns on. TS3405 Q1 Q2 Dboot CHF Cboot + _ Boot Vgate Phase Lgate Gng Vcc VD + _ +5V -5V TS3405 7-10 2003/12 rev. A |
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