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STP9NB50 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STP9NB50 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor STP9NB50 www.iscsemi.com 1 FEATURES ·Drain Current -ID= 8.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 8.6 A IDM Drain Current-Single Pulse 34.4 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W 3 2 1 TO-220C Package |
类似零件编号 - STP9NB50 |
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类似说明 - STP9NB50 |
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