2

Symbol

Parameters/Condition

Unit

Max

Vd

Drain to Ground Voltage

V

5.5

Id

Drain Current

mA

100

Pin

RF CW Input Power Max

dBm

10

Tch

Max Channel Temperature

C

+150

Tstg

Storage Temperature

C

-65 +150

Tmax

Maximum Assembly Temperature

C

260 for 20s

Note:

1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vd, Id, and

Pin were determined at an ambient temperature of 25°C unless noted otherwise.

Symbol

Parameter and Test Condition

Unit

Min.

Typ.

Max.

Idd

Drain Current Under Any RF Power Drive and Temp.] (Vdd = 3 V)

mA

65

90

Vdd

Drain Supply Voltage

V

3

5

qjc

C/W

27

Notes:

2. Ambient operational temperature TA = 25°C unless noted

3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp.

(Tb) = 25°C calculated from measured data.

Symbol

Parameters and Test Conditions

Frequencies

(GHz)

Units

Minimum

Typical

Maximum

Gain

RF Small Signal Gain

18, 26, 31

dB

18

22

NF

Noise Figure into 50W(5)

18, 26, 31

dB

3.0

4.0

Input Return Loss

dB

-12

Output Return Loss

dB

-12

Iso

Isolation

dB

-45

Compression

dBm

8

OIP3

Output Third Order Intercept Point

dBm

19

Notes:

4. All tested parameters guaranteed with measurement accuracy +/-0.5 dB for the 6 to 20 GHz range, ±0.75 dB for the 20 to 33 GHz range and

±1.0 dB for the 33 to 50 GHz range.

5. NF is measured on-wafer. Additional bond wires (~0.2 nH) at input could improve NF at some frequencies.