BAS69 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

BAS69 Series

Characteristics

3/9

Figure 1.

Forward voltage drop versus

forward current (typical values)

Figure 2.

Reverse leakage current versus

reverse voltage applied (typical

values)

1.E-01

1.E+00

1.E+01

1.E+02

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(V)

Tj=125°C

Tj=85°C

Tj=25°C

Tj=-40°C

(mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0.0

2.5

5.0

7.5

10.0

12.5

15.0

V (V)

Tj=125°C

Tj=85°C

Tj=25°C

I (µA)

Figure 3.

Differential forward resistance

versus forward current (typical

values)

Figure 4.

Junction capacitance versus

reverse voltage applied (typical

values)

100

1.0

10.0

100.0

I (mA)

F=10kHz

Tj=25°C

R( )

Ω

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0

2.5

5.0

7.5

10.0

12.5

15.0

V (V)

F=1MHz

Vosc=30mV

RMS

Tj=25°C

C(pF)

Figure 5.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (SOT-323)

Figure 6.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (SOT-666)

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SOT-323

Epoxy FR4

CU=2.25 mm²

CU=35 µm

(s)

th(j-a)/Rth(j-a)

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

SOT-666

Epoxy FR4

CU=35 µm

(s)

th(j-a)/Rth(j-a)

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