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APDS-9102 数据表(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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APDS-9102 数据表(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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2 / 5 page ![]() 2 Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Max Rating Unit Infrared Diode Power Dissipation [] PD 75 mW Peak Forward Current ( 300pps, 0 μs pulse) ICP 3 A Continuous Forward Current IF 50 mA Reverse Voltage VR 5 V Phototransistor Power Dissipation [] Pc 00 mW Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 5 V Collector Current IC 20 mA Operating Temperature Range TOP -35˚C to +65˚C Storage Temperature Range TSTG -40˚C to +00˚C Lead Soldering Termperature (.6mm(0.063 ”) From Case) TS 260˚C for 5 seconds Note: 1. Derate Linearly 1.33mW/ ˚C from 25˚C Electrical / Optical Characteristics (Ta=25˚C) Parameter Symbol Min. Typ. Max. Unit Test Condition Input Diode Forward Voltage VF .2 .6 V IF=20mA Reverse Current IR 00 μA VR= 5V Output Phototransistor Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC= mA Emitter-Collector Breakdown Voltage V(BR)ECO 5 V IE= 0.mA Collector-Emitter Dark Current ICEO 00 nA VCE= 0V Coupler Collector-Emitter Saturation Voltage VCE(SAT) 0.4 V IC= 0.08mA, IF= 20mA On State Collector Current [2] IC(ON) 0.6 mA VCE= 5V, IF= 20mA Note: 2. Reflective surface is Eastman Kodak(or equivalent) neutral white paper with 90% diffused reflectance placed at 3.81mm(0.15”) from read head. |
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