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Die Size (Unsawn)

965 x 965

37.99 x 37.99

µm

mils

Anode Pad Size

851 x 851

33.5 x 33.5

µm

mils

Die Thickness

250 (±20)

9.84 (±0.79)

µm

mils

Top Metal Composition

Al ≥ 4µm

Back Metal Composition

NiTi/Ag (0.2/0.8 µm)

200 Watt, Uni-Directional TVS Diode

Silicon Transient Voltage Suppressor diode in bare die form



200W peak pulse power dissipation



Excellent clamping capabilities



Very fast response time



Metalized for Wire Bonding



High Reliability tested grades.

Rev 1.0

02/12/24

Features:

Die Dimensions in µm (mils)

Ordering Information

The following part suffixes apply:



No suffix - MIL-STD-750 /2073 Visual Inspection



“H” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class H LAT



“K” - MIL-STD-750 /2072 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – By specific request



Unsawn Wafer – By specific request



With additional electrical selection – By specific request

CHIP BACKSIDE IS CATHODE

851 (33.5)

965 (37.99)

ANODE

ANODE