polyfet rf devices

LP802

12

Single Ended

AP

30.0

2.0

60.0

1.80 C/W

65

1.6

11.00

2.0

55

0.50

5.00

4.5

80

0.20

70

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Common Source Power Gain

Drain Efficiency

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

Storage

Temperature

DC Drain

Current

Drain to

Source

Voltage

Gate to

Source

Voltage

-65 C to 150 C

200 C

A

V

Load Mismatch Tolerance

VSWR

Drain to

Gate

Voltage

20:1

Relative

0.80

0.20

Ids =

mA, Vgs = 0V

V, Vgs = 0V

Ciss

Crss

Coss

Vds =

Idq =

A, Vds =

V, F =

0.80

Bvdss

Idss

Drain Breakdown Voltage

V

mA

pF

pF

pF

Common Source Output Capacitance

Common Source Feedback Capacitance

Idq =

Idq = 0.80

1,000

Vgs = 20V, Ids =

Rdson

Saturation Resistance

Forward Transconductance

gM

Vds = 10V, Vgs = 5V

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

1,000

1,000

Common Source Input Capacitance

70

V

Igss

Vgs

Idsat

Zero Bias Drain Current

Gate Leakage Current

Gate Bias for Drain Current

Saturation Current

1

7

uA

V

Mho

Ohm

Amp

PARAMETER

SYMBOL

MIN

TYP

MAX

UNITS

TEST CONDITIONS

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

RF CHARACTERISTICS (

30.0

ABSOLUTE MAXIMUM RATINGS ( T =

Gps

28.0

A, Vds =

V, F =

A, Vds =

V, F =

28.0

28.0

Watts

V

1

MHz

MHz

MHz

Watts

Package Style

30.0

Vds = 0V Vgs = 30V

Vgs = 20V, Vds = 10V

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

General Description

28.0

Vds =

A, Vgs = Vds

Ids =

A

η

dB

%

o

o

o

o

o

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

"Polyfet" process features

low feedback and output capacitances

resulting in high F transistors with high

input impedance and high efficiency.

TM

t

SILICON GATE ENHANCEMENT MODE

RF POWER

TRANSISTOR

LDMOS

Vgs = 0V, F = 1 MHz

28.0

Vds =

Vgs = 0V, F = 1 MHz

28.0

Vds =

Vgs = 0V, F = 1 MHz

28.0

REVISION 04/27/2001

20

25 C )

WATTS OUTPUT )