AMMP-5618 datasheet(2/9 Pages) AVAGO

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AMMP-5618 DC Specifications/Physical Properties[1]

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Drain Supply Current (under any RF power drive and temperature) (V

d=5.0V)

107

140

ch-b

Thermal Resistance[2] (Backside temperature, T

b = 25°C)

°C/W

Notes:

1. Ambient operational temperature T

A = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (T

channel (Tc) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb)

= 25

°C calculated from measured data.

RF Specifications[3,4,6] (TA= 25°C, Vd=5.0V, Id(Q)= 107 mA, Zo=50 Ω)

Symbol

Parameters and Test Conditions

Units

Typ.

Sigma

Gain

Small-signal Gain[5]

0.4

Noise Figure into 50

Ω[5]

4.4

0.2

P-1dB

Output Power at 1 dB Gain Compression

dBm

+19

0.9

OIP3

Third Order Intercept Point;

dBm

+30

1.2

∆f = 100 MHz; Pin = -20 dBm

RLin

Input Return Loss

-12

0.7

RLout

Output Return Loss

-12

0.6

Isol

Reverse Isolation

-40

1.2

Notes:

3. Small/Large -signal data measured in a fully de-embedded test fixture form T

A = 25°C.

4. Pre-assembly into package performance verified 100% on-wafer per AMMC-5618 published specifications

5. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies

6. Specifications are derived from measurements in a 50

Ω test environment. Aspects of the amplifier performance may be improved over a more narrow

bandwidth by application of additional conjugate, linearity, or low noise (

Γopt) matching.

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